Investigations on the influence of masks on the nature of selective area epitaxy-Reference-Cited by-同舟云学术

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Investigations on the influence of masks on the nature of selective area epitaxy

Published:1992-11 Issue:1-4 Volume:124 Page:227-234
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Thompson J.,Wood A.K.,Carr N.,Charles P.M.,Moseley A.J.,Pritchard R.,Hamilton B.,Chew A.,Sykes D.E.,Seong T.-Y.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference11 articles.

1. Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBE

2. Selective embedded growth of GaInAs by low pressure MOVPE

3. J. Thompson, N. Carr, A.K. Wood, N. Maung, P.J. Williams, P.M. Charles and A.J. Moseley, J. Crystal Growth, submitted.

4. Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD

5. Rich prospects for light-wave ICs

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Material quality improvements of ultra-broadband gain materials grown by selective-area-growth techniques;Journal of Crystal Growth;2005-12

2. Study of strain effect in MOCVD selective area growth;Applications of Photonic Technology 6;2003-12-12

3. Selective Area Growth by Periodic Supply Molecular Beam Epitaxy;Surface Review and Letters;1998-06

4. Selective area growth on planar masked InP substrates by metal organic vapour phase epitaxy (MOVPE);Progress in Crystal Growth and Characterization of Materials;1997-01

5. Inhomogeneity in the fabrication of InGaAs/GaAs quantum wire arrays by selective-area metalorganic chemical vapor deposition;Superlattices and Microstructures;1996-06

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