Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD-Reference-Cited by-同舟云学术

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Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD

Published:1992-11 Issue:1-4 Volume:124 Page:249-254
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Thrush E.J.,Gibbon M.A.,Stagg J.P.,Cureton C.G.,Jones C.J.,Mallard R.E.,Norman A.G.,Booker G.R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference3 articles.

1. Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBE

2. Temporally resolved growth habit studies of InP/(InGa)As heterostructures grown by MOCVD on contoured InP substrates

3. Code: A novel MOVPE technique for the single stage growth of buried ridge double heterostructure lasers and waveguides

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2. Analysis of channel confined selective area growth in evolutionary growth of GaN on SiO2;Journal of Crystal Growth;2015-09

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4. Pattern size effect on source supply process for sub-micrometer scale selective area growth by organometallic vapor phase epitaxy;Journal of Crystal Growth;2006-03

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