Growth of GaInAs(P) and GaInAsP/GaInAs MQW structures by CBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
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2. High performance DFB-MQW lasers at 1.5 μm grown by GSMBE
3. Very low threshold single quantum well graded‐index separate confinement heterostructure InGaAs/InGaAsP lasers grown by chemical beam epitaxy
4. CBE growth of low threshold 1.5 μm InGaAs/InGaAsP MQW lasers
5. Luminescence and transport properties of high quality InP grown by CBE between 450 and 550°C
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1. Special issue in honour of Prof. Marc Ilegems;physica status solidi (b);2005-09
2. Strained InGaAs(P)/InP multi-quantum well structures grown by chemical-beam epitaxy;Microelectronic Engineering;2000-05
3. Strain relaxation at cleaved surfaces studied by atomic force microscopy;Applied Physics A: Materials Science & Processing;1999-09-01
4. Evaluation of InP/InGaAsP distributed Bragg reflectors grown by chemical-beam epitaxy;Journal of Crystal Growth;1998-06
5. Cl and EBIC analysis of a p+ -InGaAs/n-InGaAs/n-InP/n+ -InP heterostructure;Materials Science and Engineering: B;1996-12
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