Strained InGaAs(P)/InP multi-quantum well structures grown by chemical-beam epitaxy-Reference-Cited by-同舟云学术

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Strained InGaAs(P)/InP multi-quantum well structures grown by chemical-beam epitaxy

Published:2000-05 Issue: Volume:51-52 Page:171-179
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Woo D.H,Oh M.S,Koh E.H,Yahng J.S,Kim S.H,Kim Y.D

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers

2. High resolution x-ray diffraction studies of short-period CdTe/MnTe superlattices

3. Evidence for intrinsic interfacial strain in lattice-matchedInxGa1−xAs/InP heterostructures

4. High‐resolution x‐ray diffraction studies of InGaAs(P)/InP superlattices grown by gas‐source molecular‐beam epitaxy

5. Critical layer thickness in strained Ga1−xInxAs/InP quantum wells

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