Selective area epitaxy of InP/GaInAsP heterostructures by MOMBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. A new method for the growth of GaAs epilayer at low H2 pressure
2. Emergence of a periodic mode in the so-called turbulent region in a circular Couette flow
3. Selective growth of GaAs in the MOMBE and MOCVD systems
4. Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBE
5. Selective area growth for opto-electronic integrated circuits (OEICs)
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1. Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy;Nanotechnology;2015-07-02
2. Molecular Beam Epitaxy with Gaseous Sources;Handbook of Crystal Growth;2015
3. Asymmetric growth behavior of selectively grown InP on vicinal (1 0 0) surfaces by low-pressure metal-organic chemical vapor deposition;Journal of Crystal Growth;1997-12
4. Growth of InGaAs/InP structures by gas source molecular beam epitaxy on SiO2-patterned substrates for optoelectronic applications;Journal of Crystal Growth;1997-05
5. Beam geometrical effects on planar selective area epitaxy of heterostructures;Journal of Crystal Growth;1996-07
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