Asymmetric growth behavior of selectively grown InP on vicinal (1 0 0) surfaces by low-pressure metal-organic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Application of AP MOVPE to a new butt-coupling scheme
2. Butt‐coupled InGaAs metal‐semiconductor‐metal waveguide photodetector formed by selective area regrowth
3. Lateral and longitudinal patterning of semiconductor structures by crystal growth on nonplanar and dielectric-masked GaAs substrates: application to thickness-modulated waveguide structures
4. GaInAs/InP selective area metalorganic vapor phase epitaxy for one‐step‐grown buried low‐dimensional structures
5. Facet growth of AlGaAs on GaAs with SiO2 gratings by MOCVD and applications to quantum well wires
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Monolithically Integrated Transceiver with Novel Y-Branch by Bundle Integrated Waveguide for Fibre Optic Gyroscope;Chinese Physics Letters;2007-12
2. Effect of Surface Misorientation on the Kinetics of GaAs MOVPE Examined Using Selective Area Growth;Electrochemical and Solid-State Letters;2006
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