Growth of InGaAs/InP structures by gas source molecular beam epitaxy on SiO2-patterned substrates for optoelectronic applications-Reference-Cited by-同舟云学术

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Growth of InGaAs/InP structures by gas source molecular beam epitaxy on SiO2-patterned substrates for optoelectronic applications

Published:1997-05 Issue:1-2 Volume:177 Page:1-5
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Nagy S.C.,Robinson B.J.,Thompson D.A.,Simmons J.G.,Nuban M.F.,Krawczyk S.K.,Buchheit M.,Blanchet R.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference12 articles.

1. InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD

2. 7th Int. Conf. InP and Related Materials;Aoki,1995

3. DFB lasers with monolithically integrated passive waveguide

4. Extremely large band gap shifts for MQW structures by selective epitaxy on SiO/sub 2/ masked substrates

5. Selective area epitaxy of InP/GaInAsP heterostructures by MOMBE

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