An approach to versatile highly-uniform MOVPE growth: the flow controlled stagnation point flow reactor-Reference-Cited by-同舟云学术

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An approach to versatile highly-uniform MOVPE growth: the flow controlled stagnation point flow reactor

Published:1992-11 Issue:1-4 Volume:124 Page:265-271
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kondo Makoto,Kuramata Akito,Fujii Takuya,Anayama Chikashi,Okazaki Jiro,Sekiguchi Hiroshi,Tanahashi Toshiyuki,Yamazaki Susumu,Nakajima Kazuo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference25 articles.

1. Detailed models of the MOVPE process

2. Gas phase depletion and flow dynamics in horizontal MOCVD reactors

3. A Boundary Layer Model for the MOCVD Process in a Vertical Cylinder Reactor

4. CVD in Stagnation Point Flow: An Evaluation of the Classical 1D Treatment

5. Complex flow phenomena in MOCVD reactors

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Early history of MOVPE reactor development;Journal of Crystal Growth;2019-01

2. Parametric effects on thin film growth and uniformity in an atmospheric pressure impinging jet CVD reactor;Journal of Crystal Growth;2004-06

3. Optimization of the inlet velocity profile for uniform epitaxial growth in a vertical metalorganic chemical vapor deposition reactor;International Journal of Heat and Mass Transfer;1999-11

4. Chapter 3 Metalorganic Vapor Phase Epitaxial Growth of Self-Assembled InGaAs/GaAs Quantum Dots Emitting at 1.3 μm;Semiconductors and Semimetals;1999

5. Design and operating considerations for a water-cooled close-spaced reactant injector in a production scale MOCVD reactor;Journal of Crystal Growth;1997-01

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