InGaSb/GaSb photodiodes grown by MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. High-efficiency, low-leakage MOCVD-grown GaInAs/AlInAs heterojunction photodiodes for detection to 2.4μm
2. 2.6 μm InGaAs photodiodes
3. High performance GaInAsSb/GaSb p‐n photodiodes for the 1.8–2.3 μm wavelength range
4. High-speed GaInAsSb/GaSb PIN photodetectors for wavelengths to 2.3 μm
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1. First-principles WC-GGA and mBJ calculations for structural, electronic, optical and elastic properties of MxGa1-xSb (M=Al, In, B) ternary alloys;Materials Science in Semiconductor Processing;2022-11
2. Interband transitions and dielectric functions of InGaSb alloys;Applied Physics Letters;2013-03-11
3. Effect of growth temperature on InGaSb metamorphic layers and the fabrication of InGaSb p-i-n diodes;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008
4. Characterization of InGaSb/GaSb p-n photodetectors in the 1.0- to 2.4-μm wavelength range;Optical Engineering;2004-05-01
5. Antimony-based infrared materials and devices;Thin Films;2001
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