High-speed GaInAsSb/GaSb PIN photodetectors for wavelengths to 2.3 μm-Reference-Cited by-同舟云学术

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High-speed GaInAsSb/GaSb PIN photodetectors for wavelengths to 2.3 μm

Published:1986 Issue:3 Volume:22 Page:137
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Bowers J.E.,Srivastava A.K.,Burrus C.A.,Dewinter M.A.,Pollack M.A.,Zyskind J.L.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19860096?crawler=true&mimetype=application/pdf

Reference5 articles.

Cited by 41 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review of recent progress, challenges, and prospects of 2D materials-based short wavelength infrared photodetectors;Journal of Physics D: Applied Physics;2022-04-27

2. Broadband Au/n-GaSb Schottky photodetector array with a spectral range from 300 nm to 1700nm;Optics Express;2021-11-05

3. Pulsed Laser Deposition of Transition Metal Dichalcogenides-Based Heterostructures for Efficient Photodetection;Practical Applications of Laser Ablation;2021-07-14

4. Speed characterization of p-i-n photodiode based on GaSb/GaInAsSb/GaAlAsSb heterostructure with frontal bridge contact at 19 µm;Applied Optics;2021-03-05

5. Recent Advances in High Speed Photodetectors for eSWIR/MWIR/LWIR Applications;Photonics;2021-01-11

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