High-resolution X-ray diffraction study of heterostructures grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. Degradation of II‐VI based blue‐green light emitters
2. Structural properties of the ZnSe/GaAs system grown by molecular‐beam epitaxy
3. Growth of undoped ZnSe on (100) GaAs by molecular‐beam epitaxy: An investigation of the effects of growth temperature and beam pressure ratio
4. Combining four-crystal seven-reflection and three-crystal five-reflection diffractometry for the characterization of ZnSe layers grown on GaAs by MOVPE
5. Molecular beam epitaxial growth and characterization of a novel superlattice system: Hg1−xCdxTe‐CdTe
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3. Real-time in situ x-ray diffraction as a method to control epitaxial growth;Applied Physics Letters;2003-06-30
4. Preparation and Raman spectra of ZnSe/GaAs heteroepitaxial layers;Journal of Crystal Growth;2002-04
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