Intensity variations of reflection high-energy electron diffraction during atomic layer epitaxial growth and sublimation of Zn chalcogenides
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. The determination of mbe growth mechanisms using dynamic rheed techniques
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4. Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs
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1. Characteristics of BeTe films grown by molecular beam epitaxy;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2000-03
2. Migration enhanced epitaxy of CdSe islands on ZnSe and their optical and structural characterization;Microelectronic Engineering;1998-08
3. Formation of self-assembling II–VI semiconductor nanostructures during migration enhanced epitaxy;Journal of Crystal Growth;1998-02
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5. Impact of surface stoichiometry control during the initial stages of growth on the stacking fault concentration in ZnSe epilayers grown by molecular beam epitaxy;Applied Physics Letters;1996-09-30
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