CBE growth of GaAs/GaAlAs HBTs using the new DEAlH-NMe3 precursor and all-gaseous dopants-Reference-Cited by-同舟云学术

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CBE growth of GaAs/GaAlAs HBTs using the new DEAlH-NMe3 precursor and all-gaseous dopants

Published:1992-05 Issue:1-4 Volume:120 Page:245-251
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lane P.A.,Whitehouse C.R.,Martin T.,Houlton M.,Williams G.M.,Cullis A.G.,Gill S.S.,Dawsey J.R.,Ball G.,Hughes B.T.,Crouch M.A.,Allenson M.B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. presented at 3rd Intern. Conf. on Chemical Beam Epitaxy and Related Growth Techniques;Lane,1991

2. Growth reactions and mechanisms in chemical beam epitaxy (CBE)

3. Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources

4. Modulated-beam mass spectrometry studies of the MOMBE growth of (100) GaAs and In0.1Ga0.9As

5. Growth mechanism studies in CBE/MOMBE

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