Chemical-beam-epitaxy growth of indium-containing III–V compounds using triisopropylindium-Reference-Cited by-同舟云学术

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Chemical-beam-epitaxy growth of indium-containing III–V compounds using triisopropylindium

Published:1996 Issue:2 Volume:79 Page:917
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Freer R. W.,Lane P. A.,Martin T.,Whitehouse C. R.,Whitaker T. J.,Williams G. M.,Cullis A. G.,Calcott P. D. J.,Nash K. D.,Buchannan H.,Jones A. C.,Rushworth S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference29 articles.

1. CBE growth of GaAs/GaAlAs HBTs using the new DEAlH-NMe3 precursor and all-gaseous dopants

2. P. A. Lane, T. Martin, C. R. Whitehouse, and M. Houlton, IEE Digest No. 1992∕062.

3. Evidence for vertical superlattices grown by surface selective growth in MOMBE (CBE)

4. Growth ofPnpheterojunction bipolar transistor structures by metalorganic molecular beam epitaxy

5. Carbon incorporation in AlGaAs grown by CBE

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mixed alkyl exchange and exploitable surface interactions in InGaN by NH3-based metal organic molecular beam epitaxy;Journal of Crystal Growth;2008-12

2. Source Molecules;Organometallic Vapor-Phase Epitaxy;1999

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