The growth of InGaAsP by CBE for SCH quantum well lasers operating at 1.55 and 1.4 μm
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Low threshold and high power output 1.5 μm InGaAs/InGaAsP separate confinement multiple quantum well laser grown by chemical beam epitaxy
2. Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers
3. Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy
4. The optimization of InxGa1−xAs and InP growth conditions by CBE
5. Technical aspects of InGaAs MOMBE — shutter action, system drift, and material quality
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Planar selective area growth of DH laser structures using hydrides, tertiarybutyl and ditertiarybutyl group V precursors in MOMBE;Journal of Crystal Growth;1998-06
2. Chemical beam epitaxy growth of 1.3 μm InGaAsP/InP double heterostructure lasers using all gas source doping;Applied Physics Letters;1994-08-22
3. Alloy broadening in photoluminescence spectra of GaxIn1−xAsyP1−ylattice matched to InP;Journal of Applied Physics;1994-03
4. Growth and Characterization of In0.83Ga0.17As0.39P0.61Layers by Liquid-Phase Epitaxy Using Erbium Gettering;Japanese Journal of Applied Physics;1993-06-15
5. Growth investigations of 1.3 μm GaInAsP/InP MQW laser diodes grown by chemical beam epitaxy;Journal of Crystal Growth;1993-02
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