GaAs buffer layers grown at low substrate temperatures using As2 and the formation of arsenic precipitates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
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2. 46th Device Research Conf.;Lin,1988
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4. Effect of a GaAs buffer layer grown at low substrate temperatures on a high‐electron‐mobility modulation‐doped two‐dimensional electron gas
5. Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures
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