4 × 105 cm2 V−1 s−1 peak electron mobilities in GaAs grown by solid source MBE with As2
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. A correlation between electron traps and growth processes inn‐GaAs prepared by molecular beam epitaxy
2. Growth of Al0.3Ga0.7As by molecular beam epitaxy in the forbidden temperature range using As2
3. Reduced carbon acceptor incorporation in GaAs grown by molecular beam epitaxy using dimer arsenic
4. On residual carbon acceptors in molecular‐beam epitaxial GaAs
5. Effect of arsenic source on the growth of high‐purity GaAs by molecular beam epitaxy
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