Properties of carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition using CCl4
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Hall mobility and temperature dependent photoluminescence of carbon-doped GaAs
2. Experimental and theoretical photoluminescence study of heavily carbon doped GaAs grown by low‐pressure metalorganic chemical vapor deposition
3. Temperature dependent electrical properties of heavily carbon-doped GaAs grown by low-pressure metalorganic chemical vapor deposition
4. Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride
5. Thin-Base InGaAs Heterojunction Bipolar Transistor with Parabolically Graded InGaAlAs Emitter
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparison of carbon doping of InGaAs and GaAs by CBr4 using hydrogen or nitrogen as carrier gas in LP-MOVPE;Journal of Crystal Growth;1999-02
2. Highly p-type carbon-doped InGaAs grown by atmospheric pressure organometallic vapor-phase epitaxy;Journal of Crystal Growth;1998-08
3. Maskless Selective Epitaxial Growth on Patterned GaAs Substrates by Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;1998-04-15
4. Effect of atomic bond structure on crystallographic orientation dependence of carbon doping in GaAs;Journal of Applied Physics;1998-03
5. Temperature-dependent Hall analysis of carbon-doped GaAs;Thin Solid Films;1997-11
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