Comparison of carbon doping of InGaAs and GaAs by CBr4 using hydrogen or nitrogen as carrier gas in LP-MOVPE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
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2. Characterization of the GaAs: C and AlGaAs: C doping superlattice grown by chemical beam epitaxy
3. A comparison of TMGa and TEGa for low-temperature metalorganic chemical vapor deposition growth of CCI4-doped inGaAs
4. Growth and characterization of heavily carbon doped InGaAs lattice matched to InP by LP-MOCVD using liquid CCI4
5. Carbon doped GaAs grown in low pressure-metalorganic vapor phase epitaxy using carbon tetrabromide
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