AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3μm grown by MOVPE on InP substrate-Reference-Cited by-同舟云学术

AlGaInAsPSb-based high-speed short-cavity VCSEL with single-mode emission at 1.3μm grown by MOVPE on InP substrate

Published:2013-05 Issue: Volume:370 Page:217-220
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Grasse Christian,Mueller Michael,Gruendl Tobias,Boehm Gerhard,Roenneberg Enno,Wiecha Peter,Rosskopf Juergen,Ortsiefer Markus,Meyer Ralf,Amann Markus-Christian

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

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2. Comparison of carbon doping of InGaAs and GaAs by CBr4 using hydrogen or nitrogen as carrier gas in LP-MOVPE;Keiper;Journal of Crystal Growth,1999

3. Heuristic rules for group IV dopant site selection in III–V compounds;Venkatasubramaniana;Journal of Crystal Growth,1997

4. Growth of InGaAs/GaAsSb tunnel junction for an InP-based low band gap tandem solar cell;Seidel;Journal of Crystal Growth,2007

5. 10Gb/s and 10-km error-free transmission up to 100°C with 1.3-μm wavelength wafer-fused VCSELs;Mereuta;Optics Express,2009

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