Growth of an InGaAs/GaAsSb tunnel junction for an InP-based low band gap tandem solar cell-Reference-Cited by-同舟云学术

Growth of an InGaAs/GaAsSb tunnel junction for an InP-based low band gap tandem solar cell

Published:2007-01 Issue: Volume:298 Page:777-781
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Seidel U.,Schimper H.-J.,Kollonitsch Z.,Möller K.,Schwarzburg K.,Hannappel T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

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3. L. Fraas, J. Avery, H. Huang, E. Shifman, K. Edmondson, R. King, in: 20th EU-PVSEC, 2005, 1DV.1.5.

4. T. Hannappel, F. Willig, German Patent DE 19 837 851 Germany.

5. Scanning tunneling microscopy observations of surface structures on ordered GaInAs layers grown on InP

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