Experimental and theoretical photoluminescence study of heavily carbon doped GaAs grown by low‐pressure metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355177
Reference20 articles.
1. LPMOCVD growth of C doped GaAs layers and AlGaAs/GaAs heterojunction bipolar transistors
2. Carbon‐doped AlxGa1−xAs‐GaAs quantum well lasers
3. IDENTIFICATION OF LASER TRANSITIONS IN ELECTRON‐BEAM‐PUMPED GaAs
4. Cathodoluminescence of n‐Type GaAs
5. Photoluminescence in heavily doped GaAs. I. Temperature and hole-concentration dependence
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