A new approach to the “gettering” of oxygen during the growth of GaAlAs by low pressure MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Investigation of heterojunctions for MIS devices with oxygen‐doped AlxGa1−xAs onn‐type GaAs
2. Proc. 8th Intern. Symp. on GaAs and Related Compounds;Wallis,1981
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4. Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPE
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