Correlation of reduced oxygen content in precursors with improved MOVPE layer quality-Reference-Cited by-同舟云学术

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Correlation of reduced oxygen content in precursors with improved MOVPE layer quality

Published:2003-02 Issue: Volume:248 Page:86-90
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Rushworth S.A.,Smith L.M.,Ravetz M.S.,Coward K.M.,Odedra R.,Kanjolia R.,Bland S.W.,Dimroth F.,Bett A.W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference6 articles.

1. Effects of oxygen and water vapour introduction during MOCVD growth of GaAlAs

2. Characterization of epitaxial GaAs and AlxGa1−xAs layers doped with oxygen

3. The influence of trimethylindium impurities on the performance of InAlGaAs single quantum well lasers

4. Residual oxygen contamination of InAlGaAs SQW high-power laser diodes

5. Oxygen incorporation in aluminium-based semiconductors grown by metalorganic vapour phase epitaxy

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Material quality frontiers of MOVPE grown AlGaAs for minority carrier devices;Journal of Crystal Growth;2017-04

2. High-quality MOVPE butt-joint integration of InP/AlGaInAs/InGaAsP-based all-active optical components;Journal of Crystal Growth;2014-09

3. AlxGa1−xAs minority carrier lifetime enhancement at low temperatures;Applied Physics Letters;2013-09-23

4. MOVPE Processes;Design and Realization of Novel GaAs Based Laser Concepts;2012

5. Dependence of the Decomposition of Trimethylaluminum on Oxygen Concentration;Journal of The Electrochemical Society;2011

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