GSMBE growth and PL investigation of lattice-matched quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. 1.5–1.6‐μm Ga0.47In0.53As/Al0.48In0.52As multiquantum well lasers grown by molecular beam epitaxy
2. Gain and intervalence band absorption in quantum-well lasers
3. Fabrication and performance characteristics of InGaAsP ridge-guide distributed-feedback multiquantum-well lasers
4. Very low threshold InGaAs/InGaAsP graded index separate confinement heterostructure quantum well lasers grown by atmospheric pressure metalorganic vapor phase epitaxy
5. Ultralow chirp and high-speed 1.55 mu m multiquantum well lambda /4-shifted DFB lasers
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical properties study of In.08Ga.92As/GaAs using spectral reflectance, photoreflectance and near-infrared Photoluminescence;Superlattices and Microstructures;2013-07
2. Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sources;Physica E: Low-dimensional Systems and Nanostructures;2006-05
3. Study of GSMBE growth and characteristics of high-quality strained quantum wells;Journal of Crystal Growth;1997-09
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