LPE of InP and InGaAsP on InP substrates; A verification of the diffusion limited growth model
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Proc. 7th Intern. Symp. on GaAs and Related Compounds;de Crémoux,1979
2. Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniques
3. Variation of the thickness and composition of lpe InGaAsP, InGaAs, and InP layers grown from a finite melt by the step-cooling technique
4. Thin-layer liquid phase epitaxy of InGaPAs heterostructures in short intervals (< 100 ms): Non-diffusion-limited crystal growth
5. Proc. North American Session of 6th Intern. Symp. on GaAs and Related Compounds;Hsieh,1977
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1. InSb grown on Cd0.955Zn0.045Te by liquid phase epitaxy;Infrared Physics & Technology;2013-05
2. Characterization of lattice-matched single In1-xGaxAsyP1-yquantum wells grown by conventional liquid phase epitaxy;Semiconductor Science and Technology;1994-08-01
3. Liquid phase epitaxial growth and characterization of thin In1−xGaxAsyP1–y layers lattice-matched to InP;Crystal Research and Technology;1994
4. Diffusion Limited LPE Growth of GaxIn1−xP on (100) GaAs;Physica Status Solidi (a);1991-11-16
5. Controlled uniform growth of GaInAsP/InP structures for laser application on 2 inch wafers by LP-MOVPE at 20 mbar;Journal of Crystal Growth;1988
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