Diffusion Limited LPE Growth of GaxIn1−xP on (100) GaAs-Reference-Cited by-同舟云学术

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Diffusion Limited LPE Growth of GaxIn1−xP on (100) GaAs

Published:1991-11-16 Issue:1 Volume:128 Page:123-127
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Dobosz D.,Żytkiewicz Z. R.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnet

2. Comparison of theory and experiment for LPE layer thickness of GaAs and GaAs Alloys

3. Inst. Phys. Conf. Ser. No. 33 b, 74 (1976).

4. Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniques

5. LPE of InP and InGaAsP on InP substrates; A verification of the diffusion limited growth model

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A theoretical approach to the In1-xGaxP LPE growth by computer simulation technique;Physica Status Solidi (a);1996-07-16

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