Characterization of InP/GaInAs/InP heterostructures grown by organometallic vapor phase epitaxy for high-speed p-i-n photodiodes
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. GaInAs/InP large bandwidth (> 2 GHz) PIN detectors
2. InGaAs PIN photodetectors with modulation response to millimetre wavelengths
3. Improved very-high-speed packaged InGaAs PIN punch-through photodiode
4. Large-area and visible response VPE InGaAs photodiodes
5. Vapour phase hetero-epitaxy: Growth of GaInAs layers
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