Zinc diffusion in InAsP/InGaAs heterostructures-Reference-Cited by-同舟云学术

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Zinc diffusion in InAsP/InGaAs heterostructures

Published:1999-12 Issue:12 Volume:28 Page:1433-1439
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Ettenberg Martin H.,Lange Michael J.,Sugg Alan R.,Cohen Marshall J.,Olsen Gregory H.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-999-0136-5.pdf

Reference22 articles.

1. H. Haupt, Proc. Ninth Int. Conf. Indium Phosphide and Related Materials (Piscataway, NJ: IEEE, 1997), p. 3.

2. G.H. Olsen and V.S. Ban, Solid State Technol. 30, 99 (1987).

3. G.H. Olsen, Laser Focus World 27, 21 (1991).

4. M.J. Cohen and G.H. Olsen, Laser Focus World 29, 109 (1993).

5. K. Nakajima, A. Yamaguchi, K. Akita, and T. Kotani, J. Appl. Phys. 49, 5944 (1978).

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1. Research on the correlation between the dual diffusion behavior of zinc in InGaAs/InP single-photon avalanche photodiodes and device performance;J INFRARED MILLIM W;2024

2. Effects of Diffusion Barrier Layers on the Performance of Lattice-Mismatched Metamorphic In0.83Ga0.17As Photodetectors;Electronics;2024-04-02

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4. Study of Zinc-diffused InGaAs/InP planar infrared detector processed with rapid thermal annealing;J INFRARED MILLIM W;2023

5. Surface morphology of InGaAs and InP layers after local Zn diffusion from the vapor phase in the MOCVD reactor;MATER PHYS MECH;2023

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