Large-area and visible response VPE InGaAs photodiodes
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/31876/01483035.pdf?arnumber=1483035
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Molecular beam epitaxy of highly mismatched In[sub 0.73]Ga[sub 0.27]As on InP for near-infrared photodetectors;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-03
2. Dark current analysis and characterization of In/sub x/Ga/sub 1-x/As/InAs/sub y/P/sub 1-y/ graded photodiodes with x<0.53 for response to longer wavelengths (<1.7 mu m);Journal of Lightwave Technology;1992
3. Wide-Wavelength InGaAs/InP PIN Photodiodes Sensitive from 0.7 to 1.6 µm;Japanese Journal of Applied Physics;1989-10-20
4. Long-term operation of planar InGaAs/InP p-i-n photodiodes;IEEE Transactions on Electron Devices;1988
5. Protective coating on thep‐njunction of In0.53Ga0.47As/InPp‐i‐nplanar diodes by vacuum‐evaporated glass;Journal of Applied Physics;1987-01
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