On the role of Hydrogen in the MOCVD of GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Deposition of GaAs Epitaxial Layers by Organometallic CVD: Temperature and Orientation Dependence
2. A study of the growth mechanism of epitaxial GaAs as grown by the technique of metal organic vapour phase epitaxy
3. Kinetics of GaAs growth by low pressure MO-CVD
4. The role of CH4 in metal organic chemical vapour deposition of GaAs
5. Emergence of a periodic mode in the so-called turbulent region in a circular Couette flow
Cited by 30 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparison of triethylgallium and diethylgallium ethoxide for β-Ga2O3 growth by metalorganic vapor phase epitaxy;Journal of Vacuum Science & Technology A;2023-06-01
2. Effects of elevated temperatures and contaminated hydrogen gas mixtures on novel ultrathin palladium composite membranes;International Journal of Hydrogen Energy;2017-12
3. Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition;Journal of Applied Physics;2016-09-08
4. Comparison of carbon doping of InGaAs and GaAs by CBr4 using hydrogen or nitrogen as carrier gas in LP-MOVPE;Journal of Crystal Growth;1999-02
5. Design of the OMVPE Process;Organometallic Vapor-Phase Epitaxy;1999
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3