In-situ monitoring of dopant concentration variation in a silicon melt during Czochralski growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Si Bridging Epitaxy from Si Windows onto SiO2byQ-Switched Ruby Laser Pulse Annealing
2. In-situ observation of impurity diffusion boundary layer in silicon Czochralski growth
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4. On a time-dependent motion of a rotating fluid
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