In-situ observation of impurity diffusion boundary layer in silicon Czochralski growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. The effect of fluctuating growth rates on segregation in crystals grown from the melt
2. The effect of fluctuating growth rates on segregation in crystals grown from the melt
3. Validity of the stagnant film approximation for mass transfer in crystal growth and dissolution
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