Relaxation in InxGa1-xAs/InP for compressive and tensile strain
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. The effects of misfit dislocation nucleation and propagation on Si/Si1-xGex critical thickness values
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1. Structural characterization of semi-strained layer (GaAs)1−x(Si2)x/GaAs multilayers grown by magnetron sputtering;Thin Solid Films;2002-09
2. Structural and compositional properties of epitaxial (GaAs) 1-x (Ge 2 ) x thin films grown by rf magnetron sputtering;SPIE Proceedings;2000-12-15
3. Role of relative tilt on the structural properties of GaInSb epitaxial layers grown on (001) GaSb substrates;Journal of Applied Physics;1999-07-15
4. Influence of growth conditions on the residual strain in thick metalorganic vapor phase epitaxy grown InGaAs epilayers;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1997-01
5. Quantification by optical absorption of the coarse modulation observed by transmission electron microscopy in InGaAs layers grown on InP(100);Semiconductor Science and Technology;1996-09-01
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