In situ control of heterointerface quality in MOVPE by surface photo-absorption
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Epitaxial regrowth of an InAs surface on InP: An example of artificial surfaces
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1. Self‐Assembled InAs Quantum Dots on InGaAsP/InP(100) by Modified Droplet Epitaxy in Metal–Organic Vapor Phase Epitaxy around the Telecom C‐Band for Quantum Photonic Applications;physica status solidi (RRL) – Rapid Research Letters;2023-09-26
2. Determination of the phosphorus desorption rate during high-temperature annealing of the InP(001) substrate in an arsenic flux;Journal of Physics: Conference Series;2022-03-01
3. Transformation of the InP(001) surface upon annealing in an arsenic flux;Surface Science;2021-08
4. InAs/InP Quantum Dots in Etched Pits by Droplet Epitaxy in Metalorganic Vapor Phase Epitaxy;physica status solidi (RRL) – Rapid Research Letters;2020-06-08
5. The Science and Practice of Metal-Organic Vapor Phase Epitaxy (MOVPE);Handbook of Crystal Growth;2015
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