Investigation of InP surface under arsenic pressure using RHEED-TRAXS
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference4 articles.
1. In situ scanning microprobe reflection high-energy electron diffraction observation of GaAs surfaces during molecular-beam epitaxial growth
2. Chemical Analysis of Surfaces by Total-Reflection-Angle X-Ray Spectroscopy in RHEED Experiments (RHEED-TRAXS)
3. Proc. 11th Intern. Vacuum Congr. and 7th Intern. Conf. on Solid Surfaces;Shimizu,1989
4. Combined RHEED-AES study of the thermal treatment of (001) GaAs surface prior to MBE growth
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2. High-temperature arsenic adsorption on InP(110)—surface bonding and surface structure;Journal of Electron Spectroscopy and Related Phenomena;1998-11
3. Optical properties of thin layers of GaAs strained to InP;Physica E: Low-dimensional Systems and Nanostructures;1998-07
4. Investigation of the As/InP(110) interface by high resolution photoemission;Surface Science;1995-07
5. Spectroscopic studies of ultra-thin quantum-wells of GaAs and GaInAs in InP grown by MOVPE;Solid-State Electronics;1994-04
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