Optical properties of thin layers of GaAs strained to InP
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference15 articles.
1. Type-I to type-II superlattice transition in strained layers ofInxGa1−xAs grown on InP
2. Optical properties of III–V strained-layer quantum wells
3. Strain effects on GaxIn1−xAs/InP single quantum wells grown by organometallic vapor‐phase epitaxy with 0≤x≤1
4. Direct type II–indirect type I conversion of InP/GaAs/InP strained quantum wells induced by hydrostatic pressure
5. Band lineups and deformation potentials in the model-solid theory
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Conduction band offset and quantum states probed by capacitance–voltage measurements for InP/GaAs type-II ultrathin quantum wells;Journal of Applied Physics;2011-04
2. Temperature dependence of the photoluminescence from InP/GaAs type-II ultrathin quantum wells;Journal of Physics D: Applied Physics;2010-10-27
3. Observation of electron confinement in InP/GaAs type-II ultrathin quantum wells;Applied Physics Letters;2010-09-13
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