Modes of growth stability breakdown in the seeded crystallization of microzone-melted silicon on insulator
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference42 articles.
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4. Subgrain boundaries in laterally seeded silicon‐on‐oxide formed by graphite strip heater recrystallization
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1. Crystal Growth Behaviors of Silicon during Melt Growth Processes;International Journal of Photoenergy;2012
2. Photoluminescence and X-ray diffraction studies on Cu2O;Journal of Luminescence;2009-12
3. Defect Engineering in SOI Films Prepared by Zone-Melting Recrystallization;Physical and Technical Problems of SOI Structures and Devices;1995
4. Artificial Epitaxy (Graphoepitaxy);Oriented Crystallization on Amorphous Substrates;1991
5. Characteristic Comparison Between Ge-on-Insulator (GOI) and SI-on-Insulator (SOI) Beam-Induced Crystallization Mechanism;MRS Proceedings;1986
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