Transport restriction effect for gaseous components on the carbon content of LEC GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Correlation of threshold voltage of implanted field‐effect transistors and carbon in GaAs substrates
2. Semi-Insulating III–V Materials;Washizuka,1986
3. Growth of semi‐insulating GaAs crystals with low carbon concentration using pyrolytic boron nitride coated graphite
4. Influence of melt preparation on residual impurity concentration in semi-insulating LEC GaAs
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Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Theoretical analysis for the segregation in the liquid encapsulated Czochralski system;Journal of Crystal Growth;1994-08
2. Ambient gas constituents and segregation of carbon and boron in LEC GaAs single crystals: the role of water in boric oxide encapsulants;Journal of Crystal Growth;1993-11
3. Vacuum Bakeout Effect on Ambient Gas in a High Pressure LEC Puller;Japanese Journal of Applied Physics;1992-06-15
4. Chemical interactions in GaAs-LEC crystal growth;Advanced Materials;1991-09
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