GaxIn1−xP/GaAs grown by gas source molecular beam epitaxy using phosphine
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. Molecular beam epitaxial growth of InGaAlP on (100) GaAs
2. InGaP/InGaAlP double‐heterostructure and multiquantum‐well laser diodes grown by molecular‐beam epitaxy
3. GaInP/AlInP Quantum Well Structures and Double Heterostructure Lasers Grown by Molecular Beam Epitaxy on (100) GaAs
4. MOCVD-Grown Al0.5In0.5P-Ga0.5In0.5P Double Heterostructure Lasers Optically Pumped at 90 K
5. Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature
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1. Chemical beam epitaxial growth of GaInP using TBP, TIPGa and EDMIn;Journal of Materials Science;2003
2. Low‐temperature photoluminescence of sulfur‐ and magnesium‐doped InGaP epilayers grown by liquid‐phase epitaxy;Journal of Applied Physics;1996-02-15
3. Photoluminescence of three phonon replicas of the bound exciton in undoped InGaP prepared by liquid phase epitaxy;Journal of Applied Physics;1995-08-15
4. AlGaInP QUANTUM WELL LASERS;Quantum Well Lasers;1993
5. Effect of ordered structure on the acceptor energy level of Be‐doped Al0.5In0.5P;Journal of Applied Physics;1992-01-15
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