Effect of ordered structure on the acceptor energy level of Be‐doped Al0.5In0.5P
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350394
Reference12 articles.
1. A study of p-type doping for AlGaInP grown by low-pressure MOCVD
2. The Energy Levels of Zn and Se in (AlxGa1-x)0.52In0.48P
3. Effects of Zn Electrical Activity on Band Gap Energy in Zn-Doped InGaAlP Grown by Metalorganic Chemical Vapor Deposition
4. A deep level in Zn‐doped InGaAlP
5. Growth of heavily Be‐doped AlInP by gas source molecular beam epitaxy
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1. INADEQUACY OF ARRHENIUS PLOTS AS A GRAPHICAL-METHOD FOR DETERMINATION LOCALIZED STATES;Journal of Physics D: Applied Physics;1995-01-14
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