A study of p-type doping for AlGaInP grown by low-pressure MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. Heterostructure Lasers;Casey,1978
2. Room-temperature continuous-wave operation of a 640 nm AlGaInP visible-light semiconductor laser
3. Y. Ohba, Y. Nishikawa, C. Nozaki, H. Sugawara and T. Nakanisi, to be submitted.
4. Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasers
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