Gas source MBE growth of InP
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Gas source molecular beam epitaxy of GaxIn1−xPyAs1−y
2. Gas source MBE of InP and GaxIn1−xPyAs1−y : Materials properties and heterostructure lasers
3. Proc. 12th Intern. Symp. on GaAs and Related Compounds;Kawaguchi,1986
4. Observations on intensity oscillations in reflection high‐energy electron diffraction during chemical beam epitaxy
5. Observations on intensity oscillations in reflection high‐energy electron diffraction during gas source molecular beam epitaxy of InP
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2. Chemical Beam Epitaxial Growth of InP and GaP by Using Tertiarybutylbis (Dimethylamino) Phosphine;Journal of the Korean Physical Society;2007-12-15
3. Electrical and optical properties of Si-doped InP grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell;Journal of Applied Physics;2000-06
4. Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In0.48Ga0.52P on GaAs;Japanese Journal of Applied Physics;1999-02-15
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