Electronic and optical devices with gallium arsenide on silicon prepared by MBE
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference38 articles.
1. Silicon Cleaning with Hydrogen Peroxide Solutions: A High Energy Electron Diffraction and Auger Electron Spectroscopy Study
2. Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE
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5. Silicon Semiconductor Data;Wolf,1969
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1. High quantum efficiency Schottky diode photodetector on the base of ultrathin GaAs‐on‐Si film;Journal of Applied Physics;1996-04
2. Structural study of in situ grown Te/GaAs(001) interfaces by grazing incidence X-ray diffraction;Surface Science;1991-07
3. Defect Filtering in GaAs on Si by Conformal Growth;Japanese Journal of Applied Physics;1991-03-15
4. Misfit evolution in the early stages of the heteroepitaxial growth of GaAs on Si(001): An in-situ X-ray scattering study;Journal of Crystal Growth;1990-04
5. Molecular Beam Epitaxial Growth of InxGa1-xAs and InxAl1-xAs on Si Substrates;Japanese Journal of Applied Physics;1989-07-20
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