Structural study of in situ grown Te/GaAs(001) interfaces by grazing incidence X-ray diffraction-Reference-Cited by-同舟云学术

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Structural study of in situ grown Te/GaAs(001) interfaces by grazing incidence X-ray diffraction

Published:1991-07 Issue: Volume:251-252 Page:478-482
ISSN:0039-6028
Container-title:Surface Science
language:en
Short-container-title:Surface Science

Author:

Etgens V.H.,Pinchaux R.,Sauvage-Simkin M.,Massies J.,Jedrecy N.,Greiser N.,Tatarenko S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Reference10 articles.

1. Electronic and optical devices with gallium arsenide on silicon prepared by MBE

2. Misfit evolution in the early stages of the heteroepitaxial growth of GaAs on Si(001): An in-situ X-ray scattering study

3. Influence of Ga‐As‐Te interfacial phases on the orientation of epitaxial CdTe on GaAs

4. Adsorption of Te on GaAs(100)

5. Model for heteroepitaxial growth of CdTe on (100) oriented GaAs substrate

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1. Ultrahigh Vacuum Surface Studies of the Electrochemical Atomic Layer Deposition of Indium Telluride on n-Type GaAs(100);The Journal of Physical Chemistry C;2008-03-25

2. Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering;Journal of Alloys and Compounds;2005-07

3. First-principles simulation of Se and Te adsorbed on GaAs(001);Physical Review B;1999-02-15

4. Chemical-state-resolved x-ray standing-wave analysis of Te-adsorbed GaAs(001)-(2×1)surface;Physical Review B;1998-03-15

5. Characterization and control of II–VI/III–V heterovalent interfaces;Journal of Crystal Growth;1998-02

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