Chemical-state-resolved x-ray standing-wave analysis of Te-adsorbed GaAs(001)-(2×1)surface
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.57.7079/fulltext
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1. Surface structure determination using x-ray standing waves;Reports on Progress in Physics;2005-03-09
2. Structure of the Te/Ge(001) surface studied by SPA-LEED;Surface Science;2004-08
3. Surfactant-mediated growth of semiconductor materials;Modelling and Simulation in Materials Science and Engineering;2002-08-14
4. First-principles simulation of Se and Te adsorbed on GaAs(001);Physical Review B;1999-02-15
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