Optical characterization of ultra-high-purity Zinc Selenide epilayers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference9 articles.
1. Photoluminescence Due to Lattice-Mismatch Defects in High-Purity ZnSe Layers Grown by Metalorganic Vapor Phase Epitaxy
2. Donor bound-exciton excited states in zinc selenide
3. Mater. Res. Soc. Symp. Spring Meeting;Marshall,1989
4. Excitonic transitions in ZnSe epilayers grown on GaAs
5. Photoluminescence Characterization of Heteroepitaxial ZnSe/GaAs and ZnSe/AlAs Grown By MBE
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1. Growth of ZnSe films on GaAs(100) substrate by x-ray-enhanced, vapor-phase epitaxy;Semiconductors;1997-01
2. Depth-resolved cathodoluminescence of ZnSe epilayers;Advanced Materials for Optics and Electronics;1994-01
3. Characterization by ion-channeling of ZnSe grown by photo-assisted molecular beam epitaxy;Journal of Crystal Growth;1993-09
4. Optical characterization of pure ZnSe films grown on GaAs;Applied Physics Letters;1993-05-10
5. Structural quality and the growth mode in epitaxial ZnSe/GaAs(100);Journal of Applied Physics;1993-03
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