Photoluminescence Due to Lattice-Mismatch Defects in High-Purity ZnSe Layers Grown by Metalorganic Vapor Phase Epitaxy
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 24 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Substrate-Dependent Differences in the Crystal Structures and Optical Properties of ZnSe Nanowires;Journal of Nanomaterials;2015
2. Effect of Heat Treatment on 1.47 eV Band in CdTe Films on GaAs(100) Substrates;Japanese Journal of Applied Physics;2010-07-20
3. Excitonic and pair-related photoluminescence in ZnSe nanowires;Journal of Applied Physics;2008-03
4. Photoluminescence Study of ZnSe Single Crystals Obtained by Solid Phase Recrystallization under Different Pressure Conditions. Effects of Thermal Treatment;physica status solidi (a);2002-11
5. The role of extended defects in the formation of the spectrum of electronic states in high-purity p-CdTe polycrystals with stoichiometric composition;Physics of the Solid State;2001-10
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