Growth of ZnSe films on GaAs(100) substrate by x-ray-enhanced, vapor-phase epitaxy-Reference-Cited by-同舟云学术

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Growth of ZnSe films on GaAs(100) substrate by x-ray-enhanced, vapor-phase epitaxy

Published:1997-01 Issue:1 Volume:31 Page:26-28
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Kovalenko A. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1187046.pdf

Reference13 articles.

1. J. Gutowski, N. Presser, and G. Kudlek, Phys. Status Solidi A 120, 11 (1990).

2. I. Yao, M. Fujimoto, S. Chang, and M. Tanino, J. Cryst. Growth 111, 823 (1991).

3. M. Umar-Syed and P. Lilley, J. Cryst. Growth 88, 415 (1988).

4. A. V. Kovalenko, A. Yu. Mekekechko, N. V. Bondar’, V. V. Tishchenko, Yu. M. Shchekochikhin, S. M. Rumyantseva, and I. S. Malashenko, Fiz. Tekh. Poluprovodn. 26, 1251 (1992) [Sov. Phys. Semicond. 26, 698 (1992)].

5. A. V. Kovalenko, A. Yu. Mekekechko, V. V. Tishchenko, and N. V. Bondar’, Fiz. Tverd. Tela (St. Petersburg) 36, 1350 (1994) [Phys. Solid State 36, 737 (1994)].

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