Elimination of grown-in dislocations in In-doped liquid encapsulated Czochralski GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. Direct observation of dislocation effects on threshold voltage of a GaAs field‐effect transistor
2. A Thermoelastic Analysis of Dislocation Generation in Pulled GaAs Crystals
3. Impurity effect on grown‐in dislocation density of InP and GaAs crystals
4. Dislocation-free GaAs and InP crystals by isoelectronic doping
5. Low dislocation, semi-insulating In-doped GaAs crystals
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1. Behavior of the edge dislocation propagating along the growth direction in Czochralski Si crystal growth;Journal of Crystal Growth;2005-02
2. Dislocation-free CZ-Si crystal growth without the thin Dash-neck;International Journal of Materials and Product Technology;2005
3. Dislocation-Free Czochralski Silicon Crystal Growth without Dash Necking;Japanese Journal of Applied Physics;2001-01-15
4. Dislocation-free B-doped Si crystal growth without Dash necking in Czochralski method: influence of B concentration;Journal of Crystal Growth;2000-06
5. Dislocation-Free Czochralski Silicon Crystal Growth without the Dislocation-Elimination-Necking Process;Japanese Journal of Applied Physics;1999-12-01
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